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Parameters | |
---|---|
Manufacturer | XSemi Corporation |
Series | XP60AN750 |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 59.2 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2688 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 1.92W (Ta), 36.7W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220CFM |
Package / Case | TO-220-3 Full Pack |
Base Product Number | XP60 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Other Names | 5048-XP60AN750IN |
Standard Package | 50 |