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| Parameters | |
|---|---|
| Manufacturer | EPC Space, LLC |
| Series | eGaN® |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 40A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 12mA |
| Gate Charge (Qg) (Max) @ Vgs | 11.7 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-SMD |
| Package / Case | 5-SMD, No Lead |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| HTSUS | 0000.00.0000 |
| Standard Package | 1 |
N-Channel 100 V 80A (Tc) Surface Mount 5-SMD
