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National Semiconductor

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Results: 24987
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    Part Number
    Manufacturers
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    Packing
    Rfq
    74LS373SCX
    Channel IC
    8963
    LM4844TL/NOPB
    Amplifier IC
    3
    LM2671N-3.3
    Buck Switching Regulator IC Positive Fixed 3.3V 1 Output 500mA 8-DIP (0.300", 7.62mm)
    227
    8-DIP (0.300", 7.62mm)
    LP3923TL-VB/NOPB
    PMIC
    6
    JM38510/23106BEA
    Memory IC
    210
    DS90CR286MTDX/NOPB
    Interface
    572
    JM38510/34804BRA
    Element Bit per Element Output
    799
    COP8SCR9HVA8/63SN
    * Microcontroller IC
    1
    LP3990MFX-3.3
    Linear Voltage Regulator IC Positive Fixed 1 Output 150mA SOT-23-5
    7123
    SC-74A, SOT-753
    LM2587S-5.0
    Switching Regulator IC Output
    574
    DS36C280TM/NOPB
    1/1 Transceiver Half RS422, RS485 8-SOIC
    5064
    8-SOIC (0.154", 3.90mm Width)
    LM431AIZ
    Shunt Voltage Reference IC Adjustable 2.5V 36 VV ±2% 100 mA TO-92-3
    24
    TO-226-3, TO-92-3 (TO-226AA)
    LM2830ZMF
    Buck Switching Regulator IC Positive Adjustable 0.6V 1 Output 1A SC-74A, SOT-753
    555
    SC-74A, SOT-753
    SCAN921025SLC/NOPB
    Element Bit per Element Output
    1
    LM285H-1.2
    Shunt Voltage Reference IC Fixed 1.235V V ±1% 20 mA TO-46-2, Metal Can
    3
    TO-46-2 Metal Can
    LM2575T-ADJ
    Switching Regulator IC Output
    2
    LM809M3X-4.63
    Supervisor Push-Pull, Totem Pole 1 Channel SOT-23-3
    2
    TO-236-3, SC-59, SOT-23-3
    LP8725TLE-B/NOPB
    * Voltage Regulator IC Output
    750
    LM2576HVSX-5.0
    Buck Switching Regulator IC Positive Fixed 5V 1 Output 3A TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
    1236
    TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
    LF256H
    J-FET Amplifier 1 Circuit TO-99-8
    2
    TO-99-8 Metal Can
    LMV1012XP-25
    Amplifier IC 1-Channel (Mono) Class AB 4-DSBGA
    958
    4-UFBGA, DSBGA
    LP38511TJ-1.8
    Linear Voltage Regulator IC Positive Fixed 1 Output 800mA TO-263-5 Thin
    976
    TO-263-5 Thin
    LMV393MMX
    Comparator General Purpose CMOS, Open-Collector, TTL 8-VSSOP
    3
    8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
    GAL16V8QS-20LVI

    IC CPLD 8MC 20NS 20PLCC


    General Description

    The EECMOS GAL16V8QS devices are fabricated using National's CS80BEV 0.8μ Electrically Erasable CMOS pro-cess.

    This advanced process makes National's GAL16V8QS extremely fast, allowing controlled output edge rates which dramatically

    reduce noise. Low noise is actually specified and guaranteed with National's GAL16V8QS Quiet Series™ devices.

    National's fast programming algorithm allows the GAL16V8QS to be programmed significantly faster than similar devices using

    industry standard programmers. Fast programming reduces the cost of programming by greatly increasing programming throughput.

    National guarantees a minimum of 100 erase/write cycles.

    Unique test circuitry and reprogrammable cells allow com-plete AC, DC, cell, and functionality testing during manufac-ture.

    Therefore, National guarantees 100% field programm-ability and functionality of GAL® devices. In addition, a se-curity

    circuit is built-in,providing proprietary designs with copy protection.


    Features

    • High performance 0.8 μ EECMOS technology

         -10 ns maximum propagation delay

         - 5 ns setup time delay

         - 7.5 ns clock to registered output delay

         - fMAx =80 MHz

         - Reduced ground bounce

         -2000V ESD protection

    • Reduced power

         - lcc max = 90 mA @ 25 MHz

    • Electrically erasable cell technology

         -100% tested at manufacture

    • Fast programming algorithm

         -Reduces programming cost, increases throughput

    • Emulates popular PAL® devices

    • Fully supported by National's OPAL™ and OPAL jr software as well as 3rd-party PLD development software

    Commercial and industrial grades



    How to choose FPGA for your project?



                                                                     



    PDF

    560
    20-LCC (J-Lead)
    LMH1982SQE
    Clock Generator IC 67.5MHz, 148.5MHz 1 32-WFQFN Exposed Pad
    85
    32-WFQFN Exposed Pad
    A Comprehensive Guide To GAL16V8-20LNC IC CPLD 8MC 20NS 20DIP

    IC CPLD 8MC 20NS 20DIP


    General Description

    The EECMOS GAL16V8QS devices are fabricated using National's CS80BEV 0.8μ Electrically Erasable CMOS pro-cess.

    This advanced process makes National's GAL16V8QS extremely fast, allowing controlled output edge rates which dramatically

    reduce noise. Low noise is actually specified and guaranteed with National's GAL16V8QS Quiet Series™ devices.

    National's fast programming algorithm allows the GAL16V8QS to be programmed significantly faster than similar devices using

    industry standard programmers. Fast programming reduces the cost of programming by greatly increasing programming throughput.

    National guarantees a minimum of 100 erase/write cycles.

    Unique test circuitry and reprogrammable cells allow com-plete AC, DC, cell, and functionality testing during manufac-ture.

    Therefore, National guarantees 100% field programm-ability and functionality of GAL® devices. In addition, a se-curity

    circuit is built-in,providing proprietary designs with copy protection.


    Features

    • High performance 0.8 μ EECMOS technology

         -10 ns maximum propagation delay

         - 5 ns setup time delay

         - 7.5 ns clock to registered output delay

         - fMAx =80 MHz

         - Reduced ground bounce

         -2000V ESD protection

    • Reduced power

         - lcc max = 90 mA @ 25 MHz

    • Electrically erasable cell technology

         -100% tested at manufacture

    • Fast programming algorithm

         -Reduces programming cost, increases throughput

    • Emulates popular PAL® devices

    • Fully supported by National's OPAL™ and OPAL jr software as well as 3rd-party PLD development software

    • Commercial and industrial grades


    How to choose FPGA for your project?


                                                                        



    PDF

    7318
    20-DIP (0.300
    LP3987ITLX-3.0/NOPB
    Linear Voltage Regulator IC Positive Fixed 1 Output 150mA 5-DSBGA (1.41x1.08)
    129
    5-WFBGA, DSBGA
    A Comprehensive Guide To GAL22CV10-25LNC LOW VOLTAGE E2CMOS PLD GENERIC A

    LOW VOLTAGE E2CMOS PLD GENERIC A


    General Description

    The EECMOS GAL22CV10 devices are fabricated using electricaly erasable floating gate technology. This program-mable

    memory technology applied to array logic provides designers with reconfigurable logic and bipolar performance at

    significantly reduced power levels.

    The 24-pn GAL22CV10 features 10 programmable Output Logic Macrocells (OLMCs) allowing each TRI-STATE® out-

    put to be configured by the user. The GAL22CV10 is also cabable of emulating most popular 24-pin PAL®devices.

    Programming is accomplished using popular hardware and software tools. NSC guarantees a minimum of 100 erase/

    write cycles.

    Unique test circultry and reprogrammable cells allow complete AC, DC, cell, and functionality testing during manufac-

    ture. Therefore, NSC guarantees 100% field programmability and functionality of NSC GAL®devices. In addition, a

    security circult is built-in, providing proprietary designs withcopy protection.


    Features

    • High performance EECMOS technology

         -10 ns maximum propagation delay

         -6 ns setup time delay

         -TTL compatible 16 mA outputs

         -2000V ESD protection

    • Reduced power

         -lcc max =130 mA @ 25 MHz

    • Electrically erasable cell technology

         -Reconfigurable logic

         -100% tested at manufacture

    • Output Logic Macrocells (OLMCs)

         -Maximum flexibility for complex logic design

         -Programmable output polarity

         -Emulates popular PAL devices

    • Fully supported by National OPALTM and OPALjr development software as well as 3rd-party PLD

         development tools

    • Security cell prevents copying logic



    How to choose FPGA for your project?




                                                                        
    4
    DIP24
    DM74LS390J
    Counter IC Element Bit
    1620
    A Comprehensive Guide To GAL22CV10-15LNC LOW VOLTAGE E2CMOS PLD GENERIC A

    LOW VOLTAGE E2CMOS PLD GENERIC A


    General Description

    The NSC E²CMOS™ GAL人® devices combine a high per-formance CMOS process with electrically erasable floating

    gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

    logic and bipolar performance at significantly reduced pow-er levels.

    The 24-pin GAL22V10 features 22 inputs, and 10 program-mable Output Logic Macro Cells (OLMCs) allowing each

    TRI-STATE® output to be configured by the user. The archi-tecture of each output is user-programmable for registered

    or combinatorial operation, active high or low polarity, and as an input, output or bidirectional I/O. This architecture

    features variable product term distribution, from 8 to 16 logi-cal product terms to each output, as shown in the logic dia-

    gram. CMOS circuitry allows the GAL22V10 to consume just 90 mA typical lcc which represents a 50% saving in power

    when compared to its bipolar counterparts. Synchronous preset and asynchronous reset product terms have been

    added which are common to all output registers to enhance system operation. The GAL22V10 is directly compatible

    with the bipolar PAL22V10 in terms of functionality, fuse map, pinout, and electrical characteristics.

    Programming is accomplished using industry standard avail-able hardware and software tools. NSC guarantees a mini-

    mum 100 erase/write cycles.

    Unique test circuitry and reprogrammable cells allow com-plete AC, DC, cell and functionality testing during manufac-

    ture. Therefore, NSC guarantees 100% field programmabili-ty of all GAL devices. In addition, electronic signature is

    available to provide positive device ID. A security circuit isbuilt-in, providing proprietary designs with copy protection.


    Features

    • High performance E²CMOS technology

         -15 ns maximum propagation delay

         -fmax = 45 MHz with feedback

         -TTL compatible 16 mA outputs

         -UltraMOS® Ill advanced CMOS technology

         -Internal pull-up resistor on all pins

    • Electrically erasable cell technology

         -Reconfigurable logic

         -Reprogrammable cells

         -100% tested/guaranteed 100% yields

         -High speed electrical erasure(<50 ms)

         -20 year data retention

    • Ten output logic macrocells

         -Maximum Flexibility

         -Programmable output polarity

         -Maximum flexibility for complex logic designs

         -Full function/fuse map/parametric compatibility with PAL22V10 devices

    • Variable product term distribution

         -From 8 to 16 product terms per output data function

    • Globai synchronous preset and asynchronous reset

    • Preload and power-up reset of all registers

         -100% functional testability

    • Fully supported by National OPAL™ and OPALjr development software

    • Security cell prevents copying logic


    How to choose FPGA for your project?



                                                                    
    310
    DIP24

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